bfr92a / bfr92ar / bfr92aw document number 85033 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 1 19150 sot23 1 23 electrostatic sensiti v ede v ice. o b ser v e preca u tions for handling. sot23 sot323 1 32 1 23 not for new design, this product will be obsoleted soon silicon npn planar rf transistor features ? high power gain ? low noise figure ? high transition frequency ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications wide band amplifier up to ghz range. mechanical data typ: bfr92a case: sot-23 plastic case weight: approx. 8.0 mg pinning: 1 = collector, 2 = base, 3 = emitter typ: bfr92ar case: sot-23 plastic case weight: approx. 8.0 mg pinning: 1 = collector, 2 = base, 3 = emitter typ: bfr92aw case: sot-323 plastic case weight: approx. 6.0 mg pinning: 1 = collector, 2 = base, 3 = emitter parts table part ordering code marking remarks package bfr92a BFR92AGELB-GS08 +p2 tape and reel sot-23 bfr92ar bfr92argelb-gs08 +p5 tape and reel sot-23 bfr92aw bfr92aw-gs08 wp2 tape and reel sot-323 e3
www.vishay.com 2 document number 85033 rev. 1.5, 08-sep-08 bfr92a / bfr92ar / bfr92aw vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 2v collector current i c 30 ma total power dissipation t amb 60 c p tot 200 mw junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol value unit junction ambient 1) r thja 450 k/w parameter test condition symbol min ty p. max unit collector-emitter cut-off current v ce = 20 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 10 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 2 v, i c = 0 i ebo 10 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 15 v dc forward current transfer ratio v ce = 10 v, i c = 14 ma h fe 65 100 150 parameter test condition symbol min ty p. max unit transition frequency v ce = 10 v, i c = 14 ma, f = 500 mhz f t 6ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb 0.3 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce 0.15 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 0.65 pf noise figure v ce = 10 v, i c = 2 ma, z s = 50 , f = 800 mhz f1.8db power gain v ce = 10 v, z s = 50 , z l = z lopt , i c = 14 ma, f = 800 mhz g pe 16 db linear output voltage - two tone intermodulation test v ce = 10 v, i c = 14 ma, d im = 60 db, f 1 = 806 mhz, f 2 = 810 mhz, z s = z l = 50 v 1 = v 2 120 mv third order intercept point v ce = 10 v, i c = 14 ma, f = 800 mhz ip 3 24 dbm
bfr92a / bfr92ar / bfr92aw document number 85033 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 3 common emitter s-parameters v ce /v i c /ma f/mhz s11 s21 s12 s22 i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang 100 0.902 -17.5 6.38 164.6 0.025 79.9 0.978 -7.6 300 0.761 -50.2 5.51 137.8 0.064 63.1 0.859 -19.3 500 0.577 -76.8 4.48 117.8 0.086 53.7 0.736 -24.2 800 0.399 -105.3 3.28 98.9 0.104 49.7 0.642 -25.3 2 1000 0.339 -121.9 2.79 90.0 0.114 50.3 0.618 -26.0 1200 0.303 -138.1 2.45 82.1 0.124 51.1 0.603 -28.0 1500 0.284 -163.3 2.07 71.4 0.140 53.1 0.577 -31.2 1800 0.272 172.9 1.79 62.5 0.157 55.5 0.560 -33.9 2000 0.278 159.4 1.65 57.3 0.171 56.6 0.558 -36.0 100 0.783 -27.2 12.84 155.8 0.023 76.3 0.934 -12.7 300 0.534 -69.6 9.12 122.8 0.052 61.9 0.711 -25.1 500 0.351 -97.6 6.41 104.8 0.068 59.5 0.580 -25.6 800 0.220 -128.3 4.28 89.8 0.091 61.1 0.518 -22.1 5 5 1000 0.188 -145.2 3.53 82.9 0.107 62.5 0.515 -22.2 1200 0.175 -162.0 3.04 76.5 0.124 62.8 0.510 -24.1 1500 0.189 175.1 2.51 67.8 0.149 63.0 0.494 -27.3 1800 0.200 153.5 2.16 60.2 0.175 62.4 0.483 -30.0 2000 0.214 140.6 1.98 55.8 0.194 61.6 0.481 -32.6 100 0.641 -38.1 19.40 146.3 0.020 73.2 0.869 -17.6 300 0.362 -85.8 11.09 112.0 0.043 65.2 0.597 -26.0 500 0.229 -116.7 7.27 97.3 0.062 66.3 0.496 -22.9 800 0.148 -151.6 4.69 84.9 0.089 68.1 0.465 -18.1 10 1000 0.136 -168.5 3.83 79.0 0.108 68.1 0.473 -18.4 1200 0.133 176.8 3.27 73.4 0.127 67.8 0.473 -20.6 1500 0.160 158.3 2.70 65.7 0.156 66.5 0.461 -24.6 1800 0.183 139.4 2.30 58.9 0.184 64.8 0.452 -27.4 2000 0.198 130.4 2.12 54.8 0.203 63.5 0.450 -30.1 100 0.566 -44.3 22.20 141.5 0.019 72.7 0.832 -19.4 300 0.301 -94.2 11.58 108.1 0.041 67.5 0.560 -25.1 500 0.195 -127.0 7.43 94.6 0.060 69.0 0.475 -20.9 800 0.137 -164.6 4.78 83.2 0.089 70.1 0.456 -16.5 14 1000 0.129 -179.9 3.88 77.6 0.109 69.9 0.466 -17.1 1200 0.132 167.7 3.30 72.3 0.128 69.1 0.469 -19.4 1500 0.162 153.1 2.72 64.9 0.157 67.5 0.456 -23.4 1800 0.183 136.6 2.32 58.1 0.185 65.6 0.448 -26.3 5 2000 0.204 127.4 2.13 54.1 0.205 64.1 0.446 -29.2
www.vishay.com 4 document number 85033 rev. 1.5, 08-sep-08 bfr92a / bfr92ar / bfr92aw vishay semiconductors 100 0.484 -52.5 24.55 136.0 0.018 72.0 0.788 -20.7 300 0.251 -106.2 11.67 104.3 0.039 69.5 0.531 -22.8 500 0.181 -141.8 7.37 92.1 0.058 71.5 0.466 -18.3 800 0.144 -177.4 4.70 81.3 0.088 72.0 0.456 -14.4 20 1000 0.138 169.3 3.82 76.0 0.108 71.4 0.469 -15.3 1200 0.145 159.1 3.26 70.9 0.127 70.6 0.472 -18.1 1500 0.179 148.3 2.67 63.7 0.157 68.4 0.461 -22.4 1800 0.202 133.7 2.28 57.0 0.185 66.4 0.453 -25.4 2000 0.220 125.9 2.10 52.8 0.205 64.8 0.452 -28.4 100 0.915 -16.2 6.32 165.5 0.020 80.5 0.981 -6.2 300 0.780 -46.7 5.56 139.6 0.054 65.1 0.883 -16.1 500 0.597 -71.2 4.57 119.9 0.073 55.8 0.778 -20.4 800 0.405 -97.6 3.37 101.0 0.089 52.2 0.692 -21.6 2 1000 0.339 -113.1 2.87 92.3 0.098 53.0 0.677 -22.4 1200 0.294 -129.6 2.53 84.2 0.107 54.3 0.663 -24.0 1500 0.261 -155.8 2.13 73.7 0.121 56.8 0.643 -27.0 1800 0.240 179.2 1.84 64.8 0.136 59.2 0.630 -29.6 10 2000 0.243 163.2 1.70 59.8 0.149 61.1 0.630 -31.4 100 0.816 -24.3 12.50 157.4 0.019 77.2 0.947 -10.3 300 0.569 -62.7 9.15 125.3 0.044 63.6 0.761 -20.5 500 0.372 -87.9 6.55 106.9 0.059 60.6 0.647 -21.1 800 0.220 -114.2 4.41 91.6 0.079 62.3 0.592 -18.8 5 1000 0.175 -129.6 3.63 84.6 0.093 63.9 0.590 -19.1 1200 0.153 -145.8 3.13 78.3 0.107 64.8 0.589 -20.8 1500 0.153 -175.7 2.59 69.7 0.129 65.5 0.576 -24.1 1800 0.157 158.0 2.22 62.1 0.152 65.5 0.567 -26.6 2000 0.170 143.4 2.04 57.9 0.168 65.3 0.567 -28.7 100 0.696 -33.7 18.83 148.4 0.017 74.6 0.896 -13.8 300 0.397 -75.7 11.20 114.4 0.038 66.4 0.666 -20.8 500 0.237 -101.2 7.41 99.0 0.054 67.0 0.577 -18.6 800 0.132 -130.2 4.81 86.4 0.078 68.9 0.553 -15.5 10 1000 0.103 -149.3 3.92 80.4 0.094 69.4 0.560 -16.0 1200 0.097 -165.8 3.35 75.0 0.111 69.5 0.561 -18.2 1500 0.116 167.2 2.76 67.5 0.136 69.0 0.551 -21.9 1800 0.133 141.3 2.36 60.4 0.160 67.9 0.545 -24.4 2000 0.148 129.4 2.16 56.4 0.178 66.8 0.549 -27.1 100 0.639 -38.8 21.41 143.8 0.016 73.2 0.866 -15.2 300 0.339 -82.4 11.61 110.2 0.036 67.5 0.636 -19.8 500 0.199 -110.0 7.52 96.3 0.053 69.4 0.562 -16.9 800 0.113 -144.1 4.83 84.4 0.077 70.7 0.549 -14.2 10 14 1000 0.093 160.9 3.93 78.9 0.094 71.1 0.556 -14.9 v ce /v i c /ma f/mhz s11 s21 s12 s22 i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang
bfr92a / bfr92ar / bfr92aw document number 85033 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) 1200 0.090 179.0 3.36 73.7 0.110 70.5 0.560 -17.3 1500 0.118 158.6 2.76 66.4 0.136 69.8 0.550 -21.0 1800 0.137 137.7 2.35 59.5 0.161 68.4 0.546 -24.0 2000 0.155 125.7 2.16 55.6 0.178 67.4 0.548 -26.5 100 0.576 -45.8 23.38 138.5 0.015 72.0 0.836 -15.8 300 0.286 -91.7 11.55 106.1 0.034 69.0 0.620 -17.7 500 0.177 -123.1 7.34 93.4 0.051 71.3 0.565 -14.7 800 0.113 -161.1 4.69 82.2 0.075 72.4 0.557 -12.6 20 1000 0.101 -177.3 3.81 77.1 0.092 72.4 0.568 -13.8 1200 0.107 168.1 3.24 72.0 0.109 71.9 0.571 -16.4 1500 0.136 152.5 2.67 64.8 0.134 70.9 0.564 -20.4 1800 0.160 133.1 2.27 58.1 0.159 69.5 0.559 -23.5 2000 0.181 124.2 2.09 54.0 0.176 68.4 0.560 -25.9 v ce /v i c /ma f/mhz s11 s21 s12 s22 i c /ma f/mhz lin mag ang lin mag ang lin mag ang lin mag ang figure 1. total power dissipat ion vs. ambient temperature figure 2. transiti on frequency vs. collector current 0 50 100 150 200 250 300 0204060 8 0 100 120 140 160 96 12159 p - total po w er dissipation (m w ) tot t am b - am b ient temperat u re (c) 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 i c - collector c u rrent (ma) 12 88 9 f - transition fre qu ency (mhz) t v ce = 10 v f = 500 mhz figure 3. collector base capacit ance vs. collector base voltage figure 4. noise figure vs. collector current 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 v cb - collector base voltag e(v) 13585 c - collector base capacitance ( pf ) cb f=1mhz 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 i c - collector c u rrent (ma) 12 8 91 f- n oise fig u re (db) v ce =10 v f= 8 00 mhz z s =50
www.vishay.com 6 document number 85033 rev. 1.5, 08-sep-08 bfr92a / bfr92ar / bfr92aw vishay semiconductors v ce = 10 v, i c = 10 ma, z 0 = 50 s 11 s 21 s 12 s 22 figure 5. input reflection coefficient figure 6. forward trans mission coefficient 13 526 -j0.2 -j0.5 -j -j2 -j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 2.0 ghz 0.8 0.1 0.3 13 528 0 90 180 -90 8 16 -150 -120 -60 -30 120 150 60 30 2.0 ghz 0.5 1.0 0.1 0.3 figure 7. reverse transmission coefficient figure 8. 13 527 0 90 180 -90 0.08 0.16 -150 -120 -60 -30 120 150 60 30 2.0 ghz 0.5 1.0 0.1 1.5 13 529 -j0.2 -j0.5 -j -j2 -j5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 2.0 ghz 0.8 0.1
bfr92a / bfr92ar / bfr92aw document number 85033 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 7 package dimensions in mm (inches) package dimensions in mm (inches) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) b e c 9511346 2. 8 (0.110) 3.1 (0.122) 0.4 (0.016) 0.95 (0.037) 0.1 (0.004) max. 1.20 (0.047) 1.43 (0.056) 0.4 (0.016) 0.09 8 (0.005) 0.175 (0.007) 0.95 (0.037) 1.15 (0.045) 2.35 (0.092) 2.6 (0.102) iso method e mountin g pad layout 0.4 (0.016) 0.95 (0.037) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) b e c 9511346 2. 8 (0.110) 3.1 (0.122) 0.4 (0.016) 0.95 (0.037) 0.1 (0.004) max. 1.20 (0.047) 1.43 (0.056) 0.4 (0.016) 0.09 8 (0.005) 0.175 (0.007) 0.95 (0.037) 1.15 (0.045) 2.35 (0.092) 2.6 (0.102) iso method e mountin g pad layout 0.4 (0.016) 0.95 (0.037)
www.vishay.com 8 document number 85033 rev. 1.5, 08-sep-08 bfr92a / bfr92ar / bfr92aw vishay semiconductors package dimensions in mm (inches) 96 12236
bfr92a / bfr92ar / bfr92aw document number 85033 rev. 1.5, 08-sep-08 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
